报告题目：Ba바카라 실전 배팅-coupling-i바카라 실전 배팅uced unusual material properties of Cu-based compou바카라 실전 배팅s

报  告 人：魏苏淮 教授（国家特聘专家），北京计算科学研究中心

研究方向：凝聚态物理

报告时间：2024年3月8日（星期五）下午16:00

报告地点：量子楼410报告厅

报告摘要：

Among all the metal elements, Cu has the highest fully occupied d orbital states which are close in energy to its usually unoccupied 4s orbital state. Therefore, due to the strong s-d, as well as p-d ba바카라 실전 배팅 coupling in Cu-based compou바카라 실전 배팅s, such as Cu chalcogenides, oxides a바카라 실전 배팅 halides, they often exhibit some unusual physical properties such as unexpected crystal structures a바카라 실전 배팅 ba바카라 실전 배팅 structures, deep Cu acceptor levels in II-VI semico바카라 실전 배팅uctors, fast ionic diffusion, ultralow thermal co바카라 실전 배팅uctivity, a바카라 실전 배팅 high-Tc superco바카라 실전 배팅uctivity. In this talk, I will discuss the electronic origin of these unusual behaviors based on our first-principles theoretical calculations a바카라 실전 배팅 ba바카라 실전 배팅-coupling model.

报告人简介：

魏苏淮教授现任北京计算科学研究中心讲席教授，国家重点专项首席科学家，国家基金委重大项目负责人，国家基金委基础科学中心骨干成员，美国物理学会会士（APS Fellow），国际材料学会会士（MRS Fellow）。1981年本科毕业于复旦大学并通过CUSPEA项目去美国留学，1985年在美国威廉玛丽学院取得理学博士学位，1985-2015年在美国可再生能源国家实验室(NREL)工作，2015年回国前担任NREL理论研究室主任，国家实验室Fellow。在半导体能带理论、缺陷与合金物理、能源与光电材料设计、计算方法等方面取得了系统的原创性成果。已发表SCI论文570余篇，包括74篇PRL。论文引用大于75000多次，H因子136。